2N2369ACSM high speed, medium power, npn switching transistor in a hermetically sealed ceramic surface mount package for high reliability applications features ? silicon planar epitaxial npn transistor hermetic ceramic surface mount package (sot23 compatible) cecc screening options applications: hermetically sealed surface mount version of the popular 2n2369a for high reliability / space applications requiring small size and low weight devices. v cbo collector ? base voltage v ceo collector ? emitter voltage v ebo emitter ? base voltage i c collector current p d total device dissipation @ t a =25c derate above 25c p d total device dissipation @ t c =25c derate above 25c t stg , t j operating and storage temperature range 40v 15v 4.5v 200ma 360mw 2.06mw / c 680mw 6.85mw / c ?65 to +200c mechanical data dimensions in mm (inches) sot23 ceramic (lcc1 package) absolute maximum ratings (t a = 25c unless otherwise stated) pad 1 ? base underside view pad 2 ? emitter pad 3 ? collector 21 0.51 0.10 (0.02 0.004) 0.31 (0.012) 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) 2.54 0.13 (0.10 0.005) 0.76 0.15 (0.03 0.006) 1.02 0.10 (0.04 0.004) 1.40 (0.055) max. a 0.31 (0.012) rad. rad. a = 3 semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 4141 issue 1
2N2369ACSM parameter test conditions min. typ. max. unit i c = 10ma i b =0 i c = 10 ai e =0 i e = 10 ai c =0 v ce = 20v v be = 0 v cb = 20v t a = +150 c i c = 10ma i b = 1ma t a = +125 c i c = 30ma i b = 3ma i c = 100ma i b = 10ma i c = 10ma t a = +25 c i b = 1ma t a = +125 c t a = ? 55 c i c = 30ma i b = 3ma i c = 100ma i b = 10ma i c = 10ma v ce = 0.35v t a = ? 55 c i c = 30ma v ce = 0.4v i c = 10ma v ce = 1.0v i c = 100ma v ce = 1v i c = 10ma v ce = 10v f = 100mhz v cb = 5v i e = 0 f = 140khz i c = 10ma i b1 = i b2 = 10ma i c = 10ma v cc = 3v i b1 = 3ma i b2 = 1.5ma electrical characteristics (t a = 25 c unless otherwise stated) v (br)ceo* collector ? emitter breakdown voltage v (br)cbo collector ? base breakdown voltage v (br)ebo emitter ? base breakdown voltage i ces collector ? emitter cut-off current i cbo collector ? base cut-off current v ce(sat)* collector ? emitter saturation voltage v be(sat)* base ? emitter saturation voltage h fe* current gain f t transition frequency c ob output capacitance t s storage time t on turn ? on time t off turn ? off time 15 40 4.5 0.40 30 0.20 0.30 0.25 0.50 0.70 0.85 0.59 1.02 1.15 1.60 40 20 30 120 20 500 4 13 12 18 v v v a v v ? mhz pf ns * pulse test: t p 300 s, ? 2%. semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 4141 issue 1
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